SIHP7N60E-GE3

Vishay Precision Group

SIHP7N60E-GE3
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Part No. SIHP7N60E-GE3
Manufacturer Vishay
Description VISHAY SIHP7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 17156 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.259$1.136$1.025$1.002
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Target Price:(USD)
Quantity:
Total:
$1.259

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:-
Rds On (Max) @ Id, Vgs:600 mOhm @ 3.5A, 10V
Power Dissipation (Max):78W (Tc)
Packaging:Bulk
Package / Case:TO-220-3
Other Names:SIHP7N60EGE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:680pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:40nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 7A (Tc) 78W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
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