SIHP6N80E-GE3

Electro-Films (EFI) / Vishay

SIHP6N80E-GE3
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Part No. SIHP6N80E-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 800V TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
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1 pcs10 pcs100 pcs500 pcs1000 pcs
$2.81$2.534$2.036$1.584$1.312
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$2.81

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:E
Rds On (Max) @ Id, Vgs:940 mOhm @ 3A, 10V
Power Dissipation (Max):78W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:827pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:44nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800V
Detailed Description:N-Channel 800V 5.4A (Tc) 78W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
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