SIHP6N65E-GE3

Vishay Precision Group

SIHP6N65E-GE3
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Part No. SIHP6N65E-GE3
Manufacturer Vishay
Description E Series N Channel 700 V 0.6 O 48 nC Flange Mount Power Mosfet TO-220AB
Lead Free Status / RoHS Status
In stock 17821 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.322$1.193$1.076$1.053
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$1.322

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:-
Rds On (Max) @ Id, Vgs:600 mOhm @ 3A, 10V
Power Dissipation (Max):78W (Tc)
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:820pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:48nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 7A (Tc) 78W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
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