SIHU3N50D-GE3

Electro-Films (EFI) / Vishay

SIHU3N50D-GE3
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Part No. SIHU3N50D-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 500V 3A TO251 IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
3000 pcs
$0.387
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Total:
$0.387

Specifications

Data sheet

Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-251
Series:-
Rds On (Max) @ Id, Vgs:3.2 Ohm @ 2.5A, 10V
Power Dissipation (Max):69W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:175pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500V
Detailed Description:N-Channel 500V 3A (Tc) 69W (Tc) Through Hole TO-251
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
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