HN2C01FEYTE85LF

Toshiba Semiconductor and Storage

HN2C01FEYTE85LF
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Part No. HN2C01FEYTE85LF
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2NPN 50V 0.15A ES6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
1 pcs10 pcs25 pcs100 pcs
$0.43$0.392$0.282$0.22
250 pcs500 pcs1000 pcs 
$0.138$0.118$0.08 
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.43

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Transistor Type:2 NPN (Dual)
Supplier Device Package:ES6
Series:-
Power - Max:100mW
Packaging:Original-Reel®
Package / Case:SOT-563, SOT-666
Other Names:HN2C01FEYTE85LFDKR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:60MHz
Detailed Description:Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 60MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):150mA
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