HGTG12N60A4D

onsemi

HGTG12N60A4D
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Part No. HGTG12N60A4D
Manufacturer onsemi
Description 600V SMPS Series N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 13936 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$2.488$2.246$2.026$1.982
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$2.488

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):600V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 12A
Test Condition:390V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C:17ns/96ns
Switching Energy:55µJ (on), 50µJ (off)
Supplier Device Package:TO-247
Series:-
Reverse Recovery Time (trr):30ns
Power - Max:167W
Packaging:Tube
Package / Case:TO-247-3
Other Names:HGTG12N60A4D_NL
HGTG12N60A4D_NL-ND
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:-
Gate Charge:78nC
Detailed Description:IGBT 600V 54A 167W Through Hole TO-247
Current - Collector Pulsed (Icm):96A
Current - Collector (Ic) (Max):54A
Base Part Number:HGTG12N60
Email:info@cjjhk.com

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