HGTG10N120BND

onsemi

HGTG10N120BND
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Part No. HGTG10N120BND
Manufacturer onsemi
Description 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 18144 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$2.42$2.184$1.97$1.927
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$2.42

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):1200V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Test Condition:960V, 10A, 10 Ohm, 15V
Td (on/off) @ 25°C:23ns/165ns
Switching Energy:850µJ (on), 800µJ (off)
Supplier Device Package:TO-247
Series:-
Reverse Recovery Time (trr):70ns
Power - Max:298W
Packaging:Tube
Package / Case:TO-247-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:NPT
Gate Charge:100nC
Detailed Description:IGBT NPT 1200V 35A 298W Through Hole TO-247
Current - Collector Pulsed (Icm):80A
Current - Collector (Ic) (Max):35A
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