HGTD3N60C3S9A

AMI Semiconductor / ON Semiconductor

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Part No. HGTD3N60C3S9A
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 6A 33W TO252AA
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):600V
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 3A
Test Condition:480V, 3A, 82 Ohm, 15V
Td (on/off) @ 25°C:-
Switching Energy:85µJ (on), 245µJ (off)
Supplier Device Package:TO-252AA
Series:-
Power - Max:33W
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:-
Gate Charge:10.8nC
Detailed Description:IGBT 600V 6A 33W Surface Mount TO-252AA
Current - Collector Pulsed (Icm):24A
Current - Collector (Ic) (Max):6A
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