SIHU4N80E-GE3

Electro-Films (EFI) / Vishay

SIHU4N80E-GE3
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Part No. SIHU4N80E-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 800V TO-251
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$2.25$2.029$1.63$1.268$1.051
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$2.25

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:IPAK (TO-251)
Series:E
Rds On (Max) @ Id, Vgs:1.27 Ohm @ 2A, 10V
Power Dissipation (Max):69W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Long Leads, IPak, TO-251AB
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:622pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:32nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800V
Detailed Description:N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
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