SIHW33N60E-GE3

Vishay Precision Group

SIHW33N60E-GE3
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Part No. SIHW33N60E-GE3
Manufacturer Vishay
Description MOSFET N-CH 600V 33A TO-247AD
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 9101 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$4.475$4.039$3.643$3.564
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$4.475

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247AD
Series:-
Rds On (Max) @ Id, Vgs:99 mOhm @ 16.5A, 10V
Power Dissipation (Max):278W (Tc)
Packaging:Tube
Package / Case:TO-3P-3 Full Pack
Other Names:SIHW33N60E-GE3CT
SIHW33N60E-GE3CT-ND
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3508pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AD
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
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