SI8469DB-T2-E1

Vishay Precision Group

SI8469DB-T2-E1
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Part No. SI8469DB-T2-E1
Manufacturer Vishay
Description Single P-Channel 8 V 64 mO 6.9 nC Surface Mount Power Mosfet MICRO FOOT
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 39621 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.163$0.147$0.132$0.13
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Target Price:(USD)
Quantity:
Total:
$0.163

Specifications

Data sheet

Vgs(th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±5V
Technology:MOSFET (Metal Oxide)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:64 mOhm @ 1.5A, 4.5V
Power Dissipation (Max):780mW (Ta), 1.8W (Tc)
Packaging:Cut Tape (CT)
Package / Case:4-UFBGA
Other Names:SI8469DB-T2-E1CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:900pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:17nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V
Drain to Source Voltage (Vdss):8V
Detailed Description:P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount
Current - Continuous Drain (Id) @ 25°C:4.6A (Ta)
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