SI8487DB-T1-E1

Vishay Precision Group

SI8487DB-T1-E1
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Part No. SI8487DB-T1-E1
Manufacturer Vishay
Description SI8487DB-T1-E1 P-channel MOSFET Transistor; 6.2 A; 30 V; 4-Pin MICRO FOOT
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 31351 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.315$0.284$0.256$0.251
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.315

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.2V @ 250µA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-Microfoot
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:31 mOhm @ 2A, 10V
Power Dissipation (Max):1.1W (Ta), 2.7W (Tc)
Packaging:Cut Tape (CT)
Package / Case:4-UFBGA
Other Names:SI8487DB-T1-E1CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2240pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:80nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:P-Channel 30V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
Current - Continuous Drain (Id) @ 25°C:-
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