SI8483DB-T2-E1

Vishay Precision Group

SI8483DB-T2-E1
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Part No. SI8483DB-T2-E1
Manufacturer Vishay
Description Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 37961 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.337$0.304$0.274$0.268
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.337

Specifications

Data sheet

Vgs(th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-Micro Foot™ (1.5x1)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:26 mOhm @ 1.5A, 4.5V
Power Dissipation (Max):2.77W (Ta), 13W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:6-UFBGA
Other Names:SI8483DB-T2-E1TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1840pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:65nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):12V
Detailed Description:P-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
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