MJ11030G

AMI Semiconductor / ON Semiconductor

MJ11030G
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Part No. MJ11030G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 90V 50A TO-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):90V
Vce Saturation (Max) @ Ib, Ic:3.5V @ 500mA, 50A
Transistor Type:NPN - Darlington
Supplier Device Package:TO-3
Series:-
Power - Max:300W
Packaging:Tray
Package / Case:TO-204AE
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor NPN - Darlington 90V 50A 300W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 25A, 5V
Current - Collector Cutoff (Max):2mA
Current - Collector (Ic) (Max):50A
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