MJ11016G

onsemi

MJ11016G
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Part No. MJ11016G
Manufacturer onsemi
Description 30 A, 120 V NPN Darlington Bipolar Power Transistor
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 9441 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$6.262$5.652$5.098$4.987
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$6.262

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):120V
Vce Saturation (Max) @ Ib, Ic:4V @ 300mA, 30A
Transistor Type:NPN - Darlington
Supplier Device Package:TO-204 (TO-3)
Series:-
Power - Max:200W
Packaging:Tray
Package / Case:TO-204AA, TO-3
Other Names:MJ11016GOS
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:27 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:4MHz
Detailed Description:Bipolar (BJT) Transistor NPN - Darlington 120V 30A 4MHz 200W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 20A, 5V
Current - Collector Cutoff (Max):1mA
Current - Collector (Ic) (Max):30A
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