MJ11032G

onsemi

MJ11032G
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Part No. MJ11032G
Manufacturer onsemi
Description Bipolar (BJT) Transistor NPN Darlington 120V 50A 300W Through Hole TO-204 (TO-3)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 1493 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$11.505$10.385$9.367$9.164
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$11.505

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):120V
Vce Saturation (Max) @ Ib, Ic:3.5V @ 500mA, 50A
Transistor Type:NPN - Darlington
Supplier Device Package:TO-3
Series:-
Power - Max:300W
Packaging:Tray
Package / Case:TO-204AE
Other Names:MJ11032GOS
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:23 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor NPN - Darlington 120V 50A 300W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 25A, 5V
Current - Collector Cutoff (Max):2mA
Current - Collector (Ic) (Max):50A
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