FGH75T65SQDNL4

onsemi

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Part No. FGH75T65SQDNL4
Manufacturer onsemi
Description Insulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel, TO-247
Lead Free Status / RoHS Status
In stock 4457 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$6.17$5.569$5.023$4.914
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$6.17

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):650V
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 75A
Test Condition:400V, 75A, 10 Ohm, 15V
Td (on/off) @ 25°C:44ns/208ns
Switching Energy:1.25mJ (on), 1.26mJ (off)
Supplier Device Package:TO-3PF-3
Series:-
Reverse Recovery Time (trr):134ns
Power - Max:375W
Package / Case:TO-3P-3 Full Pack
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Type:Standard
IGBT Type:Trench Field Stop
Gate Charge:152nC
Detailed Description:IGBT Trench Field Stop 650V 200A 375W Through Hole TO-3PF-3
Current - Collector Pulsed (Icm):200A
Current - Collector (Ic) (Max):200A
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