EPC2107ENGRT

EPC

EPC2107ENGRT
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Part No. EPC2107ENGRT
Manufacturer EPC
Description TRANS GAN 3N-CH 100V BUMPED DIE
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
5000 pcs
$0.927
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Target Price:(USD)
Quantity:
Total:
$0.927

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package:9-BGA (1.35x1.35)
Series:eGaN®
Rds On (Max) @ Id, Vgs:320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Power - Max:-
Packaging:Tape & Reel (TR)
Package / Case:9-VFBGA
Other Names:917-EPC2107ENGRTR
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:16pF @ 50V, 7pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:0.16nC @ 5V, 0.044nC @ 5V
FET Type:3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):100V
Detailed Description:Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Current - Continuous Drain (Id) @ 25°C:1.7A, 500mA
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