BSM180D12P3C007

LAPIS Semiconductor

BSM180D12P3C007
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See Product Specifications for product details.
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Part No. BSM180D12P3C007
Manufacturer ROHM
Description Trans MOSFET N-CH SiC 1.2KV 180A Automotive 10-Pin Tray
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 200 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$712.861$643.467$580.382$567.765
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$712.861

Specifications

Data sheet

Vgs(th) (Max) @ Id:5.6V @ 50mA
Supplier Device Package:Module
Series:-
Rds On (Max) @ Id, Vgs:-
Power - Max:880W
Packaging:Bulk
Package / Case:Module
Other Names:Q9597863
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:-
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Detailed Description:Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
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