1N8031-GA

GeneSiC Semiconductor

1N8031-GA
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Part No. 1N8031-GA
Manufacturer GeneSiC Semiconductor
Description DIODE SCHOTTKY 650V 1A TO276
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
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Reference Price
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10 pcs
$172.134
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$172.134

Specifications

Data sheet

Voltage - Peak Reverse (Max):Silicon Carbide Schottky
Voltage - Forward (Vf) (Max) @ If:1A
Voltage - Breakdown:TO-276
Series:-
RoHS Status:Tube
Reverse Recovery Time (trr):No Recovery Time > 500mA (Io)
Resistance @ If, F:76pF @ 1V, 1MHz
Polarization:TO-276AA
Other Names:1242-1118
1N8031GA
Operating Temperature - Junction:0ns
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Manufacturer Part Number:1N8031-GA
Expanded Description:Diode Silicon Carbide Schottky 650V 1A Through Hole TO-276
Diode Configuration:5µA @ 650V
Description:DIODE SCHOTTKY 650V 1A TO276
Current - Reverse Leakage @ Vr:1.5V @ 1A
Current - Average Rectified (Io) (per Diode):650V
Capacitance @ Vr, F:-55°C ~ 250°C
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