1N8035-GA

GeneSiC Semiconductor

1N8035-GA
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Part No. 1N8035-GA
Manufacturer GeneSiC Semiconductor
Description DIODE SCHOTTKY 650V 14.6A TO276
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
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1 pcs10 pcs
$214.31$203.961
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$214.31

Specifications

Data sheet

Voltage - Forward (Vf) (Max) @ If:1.5V @ 15A
Voltage - DC Reverse (Vr) (Max):650V
Supplier Device Package:TO-276
Speed:No Recovery Time > 500mA (Io)
Series:-
Reverse Recovery Time (trr):0ns
Packaging:Tube
Package / Case:TO-276AA
Other Names:1242-1122
1N8035GA
Operating Temperature - Junction:-55°C ~ 250°C
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Diode Type:Silicon Carbide Schottky
Detailed Description:Diode Silicon Carbide Schottky 650V 14.6A (DC) Surface Mount TO-276
Current - Reverse Leakage @ Vr:5µA @ 650V
Current - Average Rectified (Io):14.6A (DC)
Capacitance @ Vr, F:1107pF @ 1V, 1MHz
Base Part Number:1N8035
Email:info@cjjhk.com

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