TRS8E65C,S1Q

Toshiba Semiconductor and Storage

TRS8E65C,S1Q
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Part No. TRS8E65C,S1Q
Manufacturer Toshiba Semiconductor and Storage
Description DIODE SCHOTTKY 650V 8A TO220-2L
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
50 pcs
$7.857
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Total:
$7.857

Specifications

Data sheet

Voltage - Forward (Vf) (Max) @ If:1.7V @ 8A
Voltage - DC Reverse (Vr) (Max):650V
Supplier Device Package:TO-220-2L
Speed:No Recovery Time > 500mA (Io)
Series:-
Reverse Recovery Time (trr):0ns
Packaging:Tube
Package / Case:TO-220-2
Other Names:TRS8E65C,S1Q(S
TRS8E65CS1Q
Operating Temperature - Junction:175°C (Max)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Diode Type:Silicon Carbide Schottky
Detailed Description:Diode Silicon Carbide Schottky 650V 8A (DC) Through Hole TO-220-2L
Current - Reverse Leakage @ Vr:90µA @ 650V
Current - Average Rectified (Io):8A (DC)
Capacitance @ Vr, F:44pF @ 650V, 1MHz
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