TPH1R712MD,L1Q

Toshiba Semiconductor and Storage

TPH1R712MD,L1Q
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Part No. TPH1R712MD,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CH 20V 60A 8SOP ADV
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
5000 pcs
$0.597
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Total:
$0.597

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.2V @ 1mA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOP Advance (5x5)
Series:U-MOSVI
Rds On (Max) @ Id, Vgs:1.7 mOhm @ 30A, 4.5V
Power Dissipation (Max):78W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:TPH1R712MD,L1Q(M
TPH1R712MDL1QTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:10900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:182nC @ 5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 60A (Tc) 78W (Tc) Surface Mount 8-SOP Advance (5x5)
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
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