TC58BYG2S0HBAI6

Toshiba Memory America, Inc.

TC58BYG2S0HBAI6
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Part No. TC58BYG2S0HBAI6
Manufacturer Toshiba Memory America, Inc.
Description IC FLASH 4G PARALLEL 67VFBGA
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 191 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs25 pcs50 pcs
$5.13$4.686$4.596$4.565
100 pcs338 pcs676 pcs1014 pcs
$4.095$4.079$3.825$3.662
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$5.13

Specifications

Data sheet

Write Cycle Time - Word, Page:25ns
Voltage - Supply:1.7 V ~ 1.95 V
Technology:FLASH - NAND (SLC)
Supplier Device Package:67-VFBGA (6.5x8)
Series:Benand™
Packaging:Tray
Package / Case:67-VFBGA
Other Names:TC58BYG2S0HBAI6JDH
TC58BYG2S0HBAI6YCL
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
Memory Type:Non-Volatile
Memory Size:4Gb (512M x 8)
Memory Interface:Parallel
Memory Format:FLASH
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 67-VFBGA (6.5x8)
Access Time:25ns
Email:info@cjjhk.com

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