SSM6L09FUTE85LF

Toshiba Semiconductor and Storage

SSM6L09FUTE85LF
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Part No. SSM6L09FUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N/P-CH 30V 0.4A/0.2A US6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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$0.56$0.397$0.261$0.154$0.118
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Specifications

Data sheet

Vgs(th) (Max) @ Id:1.8V @ 100µA
Supplier Device Package:US6
Series:-
Rds On (Max) @ Id, Vgs:700 mOhm @ 200MA, 10V
Power - Max:300mW
Packaging:Cut Tape (CT)
Package / Case:6-TSSOP, SC-88, SOT-363
Other Names:SSM6L09FUTE85LFCT
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:20pF @ 5V
Gate Charge (Qg) (Max) @ Vgs:-
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array N and P-Channel 30V 400mA, 200mA 300mW Surface Mount US6
Current - Continuous Drain (Id) @ 25°C:400mA, 200mA
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