SIS888DN-T1-GE3

Vishay Precision Group

SIS888DN-T1-GE3
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See Product Specifications for product details.
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Part No. SIS888DN-T1-GE3
Manufacturer Vishay
Description N-Channel 150 V 58 mOhm 52 W ThunderFET Power Mosfet PowerPAK 1212-8S
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 21641 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.061$0.957$0.863$0.845
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Target Price:(USD)
Quantity:
Total:
$1.061

Specifications

Data sheet

Vgs(th) (Max) @ Id:4.2V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
Series:ThunderFET®
Rds On (Max) @ Id, Vgs:58 mOhm @ 10A, 10V
Power Dissipation (Max):52W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® 1212-8S
Other Names:SIS888DN-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TA)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:420pF @ 75V
Gate Charge (Qg) (Max) @ Vgs:14.5nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Drain to Source Voltage (Vdss):150V
Detailed Description:N-Channel 150V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
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