SIS782DN-T1-GE3

Vishay Precision Group

SIS782DN-T1-GE3
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Part No. SIS782DN-T1-GE3
Manufacturer Vishay
Description MOSFET 30 Volts 16 Amps 41 Watts
Lead Free Status / RoHS Status
In stock 27579 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.323$0.291$0.263$0.257
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Target Price:(USD)
Quantity:
Total:
$0.323

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8
Series:-
Rds On (Max) @ Id, Vgs:9.5 mOhm @ 10A, 10V
Power Dissipation (Max):41W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® 1212-8
Other Names:SIS782DN-T1-GE3-ND
SIS782DN-T1-GE3TR
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1025pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:30.5nC @ 10V
FET Type:N-Channel
FET Feature:Schottky Diode (Body)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 16A (Tc) 41W (Tc) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
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