SIHW47N65E-GE3

Electro-Films (EFI) / Vishay

SIHW47N65E-GE3
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Part No. SIHW47N65E-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 650V 47A TO-247AD
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247AD
Series:-
Rds On (Max) @ Id, Vgs:72 mOhm @ 24A, 10V
Power Dissipation (Max):417W (Tc)
Packaging:Tube
Package / Case:TO-247-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:5682pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:273nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 47A (Tc) 417W (Tc) Through Hole TO-247AD
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
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