SIHD2N80E-GE3
Vishay Precision Group
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See Product Specifications for product details.
Buy SIHD2N80E-GE3 with confidence from CJJhk.com, 1 Year Warranty
See Product Specifications for product details.
Buy SIHD2N80E-GE3 with confidence from CJJhk.com, 1 Year Warranty
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| Part No. | SIHD2N80E-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | Transistor MOSFET N-CH 800V 2.8A 3-Pin TO-252 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 10 pcs | 100 pcs | 1000 pcs | 10000 pcs | |
|---|---|---|---|---|---|
| $0.814 | $0.734 | $0.662 | $0.648 | ||
Specifications
Data sheet
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | D-PAK (TO-252AA) |
| Series: | E |
| Rds On (Max) @ Id, Vgs: | 2.75 Ohm @ 1A, 10V |
| Power Dissipation (Max): | 62.5W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names: | SIHD2N80E-GE3TR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 315pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 19.6nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 800V |
| Detailed Description: | N-Channel 800V 2.8A (Tc) 62.5W (Tc) Surface Mount D-PAK (TO-252AA) |
| Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
| Email: | info@cjjhk.com |
Introduce
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