SIHB33N60ET1-GE3
Vishay Precision Group
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See Product Specifications for product details.
Buy SIHB33N60ET1-GE3 with confidence from CJJhk.com, 1 Year Warranty
See Product Specifications for product details.
Buy SIHB33N60ET1-GE3 with confidence from CJJhk.com, 1 Year Warranty
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| Part No. | SIHB33N60ET1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | 600V 33A 99m?@10V16.5A 278W 4V@250?A N Channel D2PAK(TO-263) MOSFETs ROHS |
| Lead Free Status / RoHS Status |
| Reference Price (In US Dollars) | 10 pcs | 100 pcs | 1000 pcs | 10000 pcs | |
|---|---|---|---|---|---|
| $4.565 | $4.121 | $3.717 | $3.636 | ||
Specifications
Data sheet
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-263 (D²Pak) |
| Series: | E |
| Rds On (Max) @ Id, Vgs: | 99 mOhm @ 16.5A, 10V |
| Power Dissipation (Max): | 278W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds: | 3508pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 600V |
| Detailed Description: | N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount TO-263 (D²Pak) |
| Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
| Email: | info@cjjhk.com |
Introduce
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