SIHB22N60ET1-GE3
Vishay Precision Group
Images are for reference only.
See Product Specifications for product details.
Buy SIHB22N60ET1-GE3 with confidence from CJJhk.com, 1 Year Warranty
See Product Specifications for product details.
Buy SIHB22N60ET1-GE3 with confidence from CJJhk.com, 1 Year Warranty
Request a Quote
| Part No. | SIHB22N60ET1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | E-Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet D2PAK |
| Lead Free Status / RoHS Status |
| Reference Price (In US Dollars) | 10 pcs | 100 pcs | 1000 pcs | 10000 pcs | |
|---|---|---|---|---|---|
| $2.632 | $2.376 | $2.143 | $2.096 | ||
Specifications
Data sheet
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-263 (D²Pak) |
| Series: | E |
| Rds On (Max) @ Id, Vgs: | 180 mOhm @ 11A, 10V |
| Power Dissipation (Max): | 227W (Tc) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names: | SIHB22N60ET1-GE3CT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Input Capacitance (Ciss) (Max) @ Vds: | 1920pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 600V |
| Detailed Description: | N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D²Pak) |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
| Email: | info@cjjhk.com |
Introduce
We can supply SIHB22N60ET1-GE3, use the request quote form to request SIHB22N60ET1-GE3 pirce and lead time.CJJ a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB22N60ET1-GE3.The price and lead time for SIHB22N60ET1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB22N60ET1-GE3.We look forward to working with you to establish long-term relations of cooperation
Related parts for SIHB22N60ET1-GE3
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
SIHB24N65E-E3 | Vishay | MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity: N Channel; Continuous Drain | Inquiry |
|
SIHB24N65EF-GE3 | Electro-Films (EFI) / Vishay | MOSFET N-CH 650V 24A D2PAK | Inquiry |
|
SIHB22N60E-GE3 | Vishay | MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity: N Channel; Continuous Drain | Inquiry |
|
SIHB20N50E-GE3 | Electro-Films (EFI) / Vishay | MOSFET N-CH 500V 19A TO-263 | Inquiry |
|
SIHB24N65E-GE3 | Electro-Films (EFI) / Vishay | MOSFET N-CH 650V 24A D2PAK | Inquiry |
|
SIHB22N65E-GE3 | Electro-Films (EFI) / Vishay | MOSFET N-CH 650V 22A D2PAK | Inquiry |
|
SIHB21N65EF-GE3 | Electro-Films (EFI) / Vishay | MOSFET N-CH 650V 21A D2PAK | Inquiry |
|
SIHB22N65E-GE3 | Vishay Siliconix | MOSFET N-CH 650V 22A D2PAK | Inquiry |