SIHB22N65E-GE3

Vishay / Siliconix

SIHB22N65E-GE3
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Part No. SIHB22N65E-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 650V 22A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
1 pcs10 pcs25 pcs100 pcs
$4.81$4.323$4.087$3.542
250 pcs500 pcs1000 pcs 
$3.361$3.015$2.543 
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$4.81

Specifications

Data sheet

Voltage - Test:2415pF @ 100V
Voltage - Breakdown:D2PAK
Vgs(th) (Max) @ Id:180 mOhm @ 11A, 10V
Vgs (Max):10V
Technology:MOSFET (Metal Oxide)
Series:-
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:22A (Tc)
Polarization:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:SIHB22N65E-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:19 Weeks
Manufacturer Part Number:SIHB22N65E-GE3
Input Capacitance (Ciss) (Max) @ Vds:110nC @ 10V
IGBT Type:±30V
Gate Charge (Qg) (Max) @ Vgs:4V @ 250µA
FET Feature:N-Channel
Expanded Description:N-Channel 650V 22A (Tc) 227W (Tc) Surface Mount D2PAK
Drain to Source Voltage (Vdss):-
Description:MOSFET N-CH 650V 22A D2PAK
Current - Continuous Drain (Id) @ 25°C:650V
Capacitance Ratio:227W (Tc)
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