SI2329DS-T1-GE3

Vishay Precision Group

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Part No. SI2329DS-T1-GE3
Manufacturer Vishay
Description VISHAY SI2329DS-T1-GE3 MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 44564 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.373$0.337$0.304$0.297
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$0.373

Specifications

Data sheet

Vgs(th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±5V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:30 mOhm @ 5.3A, 4.5V
Power Dissipation (Max):2.5W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SI2329DS-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1485pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:29nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Drain to Source Voltage (Vdss):8V
Detailed Description:P-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
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