SI2328DS-T1-E3

Vishay Precision Group

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Part No. SI2328DS-T1-E3
Manufacturer Vishay
Description SI2328DS-T1-E3 N-channel MOSFET Transistor; 1.15 A; 100 V; 3-Pin TO-236
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 29365 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.61$0.551$0.497$0.486
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.61

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:250 mOhm @ 1.5A, 10V
Power Dissipation (Max):730mW (Ta)
Packaging:Cut Tape (CT)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SI2328DS-T1-E3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:5nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 1.15A (Ta) 730mW (Ta) Surface Mount SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:1.15A (Ta)
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