SI1011X-T1-GE3

Electro-Films (EFI) / Vishay

SI1011X-T1-GE3
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Part No. SI1011X-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 12V SC-89
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 48000 pcs
Reference Price
(In US Dollars)
1 pcs
$0.59
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Quantity:
Total:
$0.59

Specifications

Data sheet

Vgs(th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±5V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SC-89-3
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:640 mOhm @ 400mA, 4.5V
Power Dissipation (Max):190mW (Ta)
Packaging:Cut Tape (CT)
Package / Case:SC-89, SOT-490
Other Names:SI1011X-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:62pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Drain to Source Voltage (Vdss):12V
Detailed Description:P-Channel 12V 190mW (Ta) Surface Mount SC-89-3
Current - Continuous Drain (Id) @ 25°C:-
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