SCT3120ALGC11

LAPIS Semiconductor

SCT3120ALGC11
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Part No. SCT3120ALGC11
Manufacturer ROHM
Description SCT3120AL Series 650 V 21 A 156 mOhm N-Channel SiC Power Mosfet TO-247N
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 5603 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$7.599$6.86$6.187$6.053
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$7.599

Specifications

Data sheet

Vgs(th) (Max) @ Id:5.6V @ 3.33mA
Vgs (Max):+22V, -4V
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:TO-247N
Series:-
Rds On (Max) @ Id, Vgs:156 mOhm @ 6.7A, 18V
Power Dissipation (Max):103W (Tc)
Packaging:Tube
Package / Case:TO-247-3
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:460pF @ 500V
Gate Charge (Qg) (Max) @ Vgs:38nC @ 18V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):18V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
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