SCT30N120

STMicroelectronics

SCT30N120
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Part No. SCT30N120
Manufacturer STMicroelectronics
Description MOSFET N-CH 1200V 45A HIP247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 4400 pcs
Reference Price
(In US Dollars)
1 pcs30 pcs120 pcs
$30.85$27.175$24.297
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$30.85

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.6V @ 1mA (Typ)
Vgs (Max):+25V, -10V
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:HiP247™
Series:-
Rds On (Max) @ Id, Vgs:100 mOhm @ 20A, 20V
Power Dissipation (Max):270W (Tc)
Packaging:Tube
Package / Case:TO-247-3
Other Names:497-14960
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1700pF @ 400V
Gate Charge (Qg) (Max) @ Vgs:105nC @ 20V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):20V
Drain to Source Voltage (Vdss):1200V
Detailed Description:N-Channel 1200V 40A (Tc) 270W (Tc) Through Hole HiP247™
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
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