SCT2H12NZGC11

LAPIS Semiconductor

SCT2H12NZGC11
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Part No. SCT2H12NZGC11
Manufacturer ROHM
Description SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet TO-3PFM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 7789 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$5.622$5.075$4.577$4.478
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$5.622

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 900µA
Vgs (Max):+22V, -6V
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:TO-3PFM
Series:-
Rds On (Max) @ Id, Vgs:1.5 Ohm @ 1.1A, 18V
Power Dissipation (Max):35W (Tc)
Packaging:Tube
Package / Case:TO-3PFM, SC-93-3
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:184pF @ 800V
Gate Charge (Qg) (Max) @ Vgs:14nC @ 18V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):18V
Drain to Source Voltage (Vdss):1700V
Detailed Description:N-Channel 1700V 3.7A (Tc) 35W (Tc) Through Hole TO-3PFM
Current - Continuous Drain (Id) @ 25°C:3.7A (Tc)
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