RT1C060UNTR

LAPIS Semiconductor

RT1C060UNTR
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Part No. RT1C060UNTR
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 20V 6A TSST8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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$0.54$0.455$0.341$0.25$0.193
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Specifications

Data sheet

Vgs(th) (Max) @ Id:1V @ 1mA
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSST
Series:-
Rds On (Max) @ Id, Vgs:28 mOhm @ 6A, 4.5V
Power Dissipation (Max):650mW (Ta)
Packaging:Cut Tape (CT)
Package / Case:8-SMD, Flat Lead
Other Names:RT1C060UNCT
RT1C060UNTRCT
RT1C060UNTRCT-ND
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:870pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:N-Channel 20V 6A (Ta) 650mW (Ta) Surface Mount 8-TSST
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
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