RGT8NS65DGTL

LAPIS Semiconductor

RGT8NS65DGTL
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Part No. RGT8NS65DGTL
Manufacturer LAPIS Semiconductor
Description IGBT 650V 8A 65W TO-263S
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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$0.561$0.523$0.498
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$0.561

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):650V
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 4A
Test Condition:400V, 4A, 50 Ohm, 15V
Td (on/off) @ 25°C:17ns/69ns
Switching Energy:-
Supplier Device Package:LPDS (TO-263S)
Series:-
Reverse Recovery Time (trr):40ns
Power - Max:65W
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:RGT8NS65DGTLTR
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:15 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:Trench Field Stop
Gate Charge:13.5nC
Detailed Description:IGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS (TO-263S)
Current - Collector Pulsed (Icm):12A
Current - Collector (Ic) (Max):8A
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