RGT8BM65DTL

LAPIS Semiconductor

RGT8BM65DTL
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Part No. RGT8BM65DTL
Manufacturer ROHM
Description Trans IGBT Chip N-CH 650V 8A 62000mW 3-Pin(2+Tab) CPT T/R
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 17906 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.30$1.173$1.058$1.035
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$1.30

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):650V
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 4A
Test Condition:400V, 4A, 50 Ohm, 15V
Td (on/off) @ 25°C:17ns/69ns
Switching Energy:-
Supplier Device Package:TO-252
Series:-
Reverse Recovery Time (trr):40ns
Power - Max:62W
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:RGT8BM65DTLTR
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:15 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:Trench Field Stop
Gate Charge:13.5nC
Detailed Description:IGBT Trench Field Stop 650V 8A 62W Surface Mount TO-252
Current - Collector Pulsed (Icm):12A
Current - Collector (Ic) (Max):8A
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