RF4E100AJTCR

LAPIS Semiconductor

RF4E100AJTCR
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Part No. RF4E100AJTCR
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 10A HUML2020L8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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1 pcs10 pcs100 pcs500 pcs1000 pcs
$1.03$0.902$0.696$0.516$0.412
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$1.03

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.5V @ 1mA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:HUML2020L8
Series:-
Rds On (Max) @ Id, Vgs:12.4 mOhm @ 10A, 4.5V
Power Dissipation (Max):2W (Tc)
Packaging:Cut Tape (CT)
Package / Case:8-PowerUDFN
Other Names:RF4E100AJTCRCT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1460pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:13nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2020L8
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
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