RF4E080GNTR

LAPIS Semiconductor

RF4E080GNTR
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Part No. RF4E080GNTR
Manufacturer ROHM
Description 4.5V Drive Nch Mosfet, HUML6 Pkg
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 60681 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.216$0.195$0.175$0.172
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.216

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:HUML2020L8
Series:-
Rds On (Max) @ Id, Vgs:17.6 mOhm @ 8A, 10V
Power Dissipation (Max):2W (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerUDFN
Other Names:RF4E080GNTRTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:40 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:295pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:5.8nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
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