NGTB40N65IHRTG

onsemi

NGTB40N65IHRTG
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Part No. NGTB40N65IHRTG
Manufacturer onsemi
Description IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A 650 V Monolithic reverse conducting IGBT
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 15504 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.555$1.403$1.266$1.238
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$1.555

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):650V
Vce(on) (Max) @ Vge, Ic:1.7V @ 15V, 40A
Test Condition:400V, 40A, 10 Ohm, 15V
Td (on/off) @ 25°C:-
Switching Energy:420µJ (off)
Supplier Device Package:TO-3P
Series:-
Power - Max:405W
Packaging:Tube
Package / Case:TO-3P-3, SC-65-3
Other Names:NGTB40N65IHRTGOS
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:Trench Field Stop
Gate Charge:190nC
Detailed Description:IGBT Trench Field Stop 650V 80A 405W Through Hole TO-3P
Current - Collector Pulsed (Icm):160A
Current - Collector (Ic) (Max):80A
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