MJD31C1G

onsemi

MJD31C1G
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Part No. MJD31C1G
Manufacturer onsemi
Description Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 51869 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.423$0.381$0.344$0.337
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.423

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):100V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Transistor Type:NPN
Supplier Device Package:I-PAK
Series:-
Power - Max:1.56W
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Other Names:MJD31C1G-ND
MJD31C1GOS
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:2 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:3MHz
Detailed Description:Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
Current - Collector Cutoff (Max):50µA
Current - Collector (Ic) (Max):3A
Base Part Number:MJD31
Email:info@cjjhk.com

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