MJD3055T4G

onsemi

MJD3055T4G
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Part No. MJD3055T4G
Manufacturer onsemi
Description Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 45684 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.431$0.389$0.351$0.343
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.431

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:8V @ 3.3A, 10A
Transistor Type:NPN
Supplier Device Package:DPAK
Series:-
Power - Max:1.75W
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:MJD3055T4GOS
MJD3055T4GOS-ND
MJD3055T4GOSTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:19 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:2MHz
Detailed Description:Bipolar (BJT) Transistor NPN 60V 10A 2MHz 1.75W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
Current - Collector Cutoff (Max):50µA
Current - Collector (Ic) (Max):10A
Base Part Number:MJD3055
Email:info@cjjhk.com

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