IRF6602

International Rectifier (Infineon Technologies)

IRF6602
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Part No. IRF6602
Manufacturer International Rectifier
Description Mosfet N-ch 20V 11A Directfet
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In stock 2027 pcs
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Specifications

Data sheet

Vgs(th) (Max) @ Id:2.3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DIRECTFET™ MQ
Series:HEXFET®
Rds On (Max) @ Id, Vgs:13 mOhm @ 11A, 10V
Power Dissipation (Max):2.3W (Ta), 42W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:DirectFET™ Isometric MQ
Other Names:IRF6602TR
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds:1420pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:18nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):20V
Detailed Description:N-Channel 20V 11A (Ta), 48A (Tc) 2.3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MQ
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 48A (Tc)
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