HN3C51F-BL(TE85L,F

Toshiba Semiconductor and Storage

HN3C51F-BL(TE85L,F
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Part No. HN3C51F-BL(TE85L,F
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2NPN 120V 0.1A SM6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):120V
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Transistor Type:2 NPN (Dual)
Supplier Device Package:SM6
Series:-
Power - Max:300mW
Packaging:Original-Reel®
Package / Case:SC-74, SOT-457
Other Names:HN3C51F-BL(TE85LF)DKR
HN3C51F-BL(TE85LF)DKR-ND
HN3C51F-BL(TE85LFDKR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:100MHz
Detailed Description:Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
DC Current Gain (hFE) (Min) @ Ic, Vce:350 @ 2mA, 6V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA
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