HN3C10FUTE85LF

Toshiba Semiconductor and Storage

HN3C10FUTE85LF
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Part No. HN3C10FUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Description TRANSISTOR NPN US6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 161 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs25 pcs100 pcs
$0.64$0.536$0.469$0.402
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.64

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):12V
Transistor Type:2 NPN (Dual)
Supplier Device Package:US6
Series:-
Power - Max:200mW
Packaging:Cut Tape (CT)
Package / Case:6-TSSOP, SC-88, SOT-363
Other Names:HN3C10FUTE85LFCT
Operating Temperature:-
Noise Figure (dB Typ @ f):1.1dB @ 1GHz
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gain:11.5dB
Frequency - Transition:7GHz
Detailed Description:RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 20mA, 10V
Current - Collector (Ic) (Max):80mA
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