HN1B01FU-Y(L,F,T)

Toshiba Semiconductor and Storage

HN1B01FU-Y(L,F,T)
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Part No. HN1B01FU-Y(L,F,T)
Manufacturer Toshiba
Description Trans Npn/pnp 50V 0.15A US6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 30493 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs25 pcs
$0.42$0.302$0.235
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.42

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
Transistor Type:NPN, PNP
Supplier Device Package:US6
Series:-
Power - Max:200mW
Packaging:Cut Tape (CT)
Package / Case:6-TSSOP, SC-88, SOT-363
Other Names:HN1B01FU-Y(LFT)CT
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:120MHz
Detailed Description:Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):150mA
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